- 您现在的位置：买卖IC网 > Sheet目录135 > MMBD4148,215 (NXP Semiconductors)DIODE HIGH SPEED SWITCHING SOT23
 MMBD4148_1 ? NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 June 2009 2 of 10 NXP Semiconductors MMBD4148 High-speed switching diode 3. Ordering information 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Tj =25°C prior to surge. Table 3. Ordering information Type number Package Name Description Version MMBD4148 - plastic surface-mounted package; 3 leads SOT23 Table 4. Marking codes Type number Marking code[1] MMBD4148 A6* Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage -75V VR reverse voltage - 75 V IF forward current [1] - 215 mA IFRM repetitive peak forward current tp ≤ 0.5 μs; δ≤0.25 - 500 mA IFSM non-repetitive peak forward current square wave [2] tp =1μs-4A tp =1ms - 1 A tp = 1 s - 0.5 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature ?65 +150 °C Tstg storage temperature ?65 +150 °C |